Click here for input/output files and main program source code for Example 1
This example illustrates the band bending computation for n-type GaAs that has a 10 nm diameter region centered around the tip location having a high density of extrinsic states (with charge neutrality level at midgap). Several tenths of an eV of band bending occurs in the vicinity of this area. The sample voltage is set at 0 V and the contact potential is 0 eV. Output to FORT.11 and FORT.12 gives the electrostatic potential energy (column 2) vs. the z-distance through the vacuum and semiconductor (column 1, in FORT.11) or the radial distance along the surface (column 1, FORT.12). When plotted, these potentials appear as:
