SEMITIP V6, MultInt1, Example 1: GaAs(110) with 10 nm thick undoped region on n-type material
Click here for input/output files and main program source code for Example 1
This example illustrates the conductance vs. voltage for GaAs (1.42 eV band gap) that has a layer on top of thickness 2 nm (black curve) or 5 nm (red curve) and with band gap of 1.62 eV.
The conduction band component of the current is plotted here, for V > 0.
The presence of the large band gap layer on top of the GaAs is seen to decrease the tunnel current, particularly near the onset of the band. Also note that the red curve has some irregularities in it, particularly for voltage between 1 and 2 V. These irregularities are the result of somewhat loose convergence criteria, and can be eliminated by tightening those parameters.