Click here for input/output files and main program source code for Example 1
This example illustrates the current vs. voltage for the situation discussed in example 1 of Mult2, with n-type GaAs that has a 10 nm diameter region centered around the tip location having a high density of extrinsic states (with charge neutrality level at midgap). Several tenths of an eV of band bending occurs in the vicinity of this area. The contact potential is set to 0 eV. The conductance vs. voltage from FORT.15 appears as: